Superconductivity and charge-carrier localization in ultrathin La1.85Sr0.15CuO4/La2CuO4 bilayers
نویسندگان
چکیده
منابع مشابه
Superconductivity and charge-carrier localization in ultrathin La1.85Sr0.15CuO4/La2CuO4 bilayers
Superconductivity and charge-carrier localization in ultrathin La1.85Sr0.15CuO4/La2CuO4 bilayers K. Sen,1,* P. Marsik,1 S. Das,1,† E. Perret,1 R. de Andres Prada,1 A. Alberca,1,2 N. Biškup,3,4 M. Varela,3 and C. Bernhard1,‡ 1University of Fribourg, Department of Physics and Fribourg Center for Nanomaterials, Chemin du Musée 3, CH-1700, Fribourg, Switzerland 2Swiss Light Source, Paul Scherrer In...
متن کاملCharge-carrier transport properties of ultrathin Pb films
The charge-carrier transport properties of ultrathin metallic films are analysed with ab-initio methods using the density functional theory (DFT) on free-standing single crystalline slabs in the thickness range between 1 and 8 monolayers and compared with experiments for Pb films on Si(111). A strong interplay between bandstructure, quantised in the direction normal to the ultrathin film, charg...
متن کاملMagnetoresistance, Gating and Proximity Effects in Ultrathin NbN-Bi2Se3 Bilayers
Ultrathin Bi2Se3-NbN bilayers comprise a simple proximity system of a topological insulator and an s-wave superconductor for studying gating effects on topological superconductors. Here we report on 3 nm thick NbN layers of weakly connected superconducting islands, overlayed with 10 nm thick Bi2Se3 film which facilitates enhanced proximity coupling between them. Resistance versus temperature of...
متن کاملSpin-Swapping Transport and Torques in Ultrathin Magnetic Bilayers.
Planar spin transport in disordered ultrathin magnetic bilayers comprising a ferromagnet and a normal metal (typically used for spin pumping, spin Seebeck and spin-orbit torque experiments) is investigated theoretically. Using a tight-binding model that puts the extrinsic spin Hall effect and spin swapping on equal footing, we show that the nature of spin-orbit coupled transport dramatically de...
متن کاملSuperconductivity in carrier-doped silicon carbide.
We report growth and characterization of heavily boron-doped 3C-SiC and 6H-SiC and Al-doped 3C-SiC. Both 3C-SiC:B and 6H-SiC:B reveal type-I superconductivity with a critical temperature Tc=1.5 K. On the other hand, Al-doped 3C-SiC (3C-SiC:Al) shows type-II superconductivity with Tc=1.4 K. Both SiC:Al and SiC:B exhibit zero resistivity and diamagnetic susceptibility below Tc with effective hole...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2017
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.95.214506